Intel 4 Process Node In Detail: 2x Density Scaling, 20% Improved Performance

Taking place this week is the IEEE’s annual VLSI Symposium, one of the industry’s major events for disclosing and discussing new chip manufacturing techniques. One of the most anticipated presentations scheduled this year is from Intel, who is at the show to outline the physical and performance characteristics of their upcoming Intel 4 process, which will be used for products set to be released in 2023. The development of the Intel 4 process represents a critical milestone for Intel, as it’s the first Intel process to incorporate EUV, and it’s the first process to move past their troubled 10nm node – making it Intel’s first chance to get back on track to re-attaining fab supremacy.

Intel’s scheduled to deliver their Intel 4 presentation on Tuesday, in a talk/paper entitled “Intel 4 CMOS Technology Featuring Advanced FinFET Transistors optimized for High Density and High-Performance Computing”. But this morning, ahead of the show, they re publishing the paper and all of its relevant figures, giving us our first look at what kind of geometries Intel is attaining, as well as some more information about the materials being used.

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